maximum ratings (single diode, at t a=25c unless otherwise noted) pa ra m et er sy m bo l un it non-repetitive peak reverse voltage peak repetitive peak reverse voltage w orking peak reverse voltage dc blocking voltage rms reverse voltage forward continuous current a veraged rectified output current peak forward surge current @tp=1.0 s @tp=1.0s power dissipation thermal resistance, junction to ambient storage temperature v oltage: 80 v olts current: 250 ma rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) features -fast switching speed. -for general purpose switching applications. -high conductance. mechanical data -case: sot -523, molded plastic. -t erminals: solder plated, solderable per mil-std- 202e, method 208c. -w eight: 0.002 grams approx. circuit diagram cdsh3-4448/a/c/s-g page 1 qw -b0038 smd switching diodes rev :a comchip t echnology co., l td. 0.067(1.70) 0.059(1.50) 0.033(0.85) 0.030(0.75) 0.043(1.10) 0.035(0.90) 1 2 3 0.008(0.20) 0.004(0.10) 0.069(1.75) 0.057(1.45) 0.004(0.10)min. 0.004(0.10)max. 0.031(0.80) 0.024(0.60) 0.012(0.30) 0.006(0.15) v alu e 1 2 3 1 2 3 1 2 3 1 2 3 cdsh3-4448-g marking: a3 cdsh3-4448a-g marking: a6 CDSH3-4448C-g marking: a7 cdsh3-4448s-g marking: ab electrical characteristics (single diode, at t a=25c unless otherwise noted) pa ra m et er sy m bo l un it reverse breakdown voltage forward voltage reverse current capacitance between terminals reverse recovery time co nd iti on s ma x. v br v f1 v f2 v f3 v f4 i r1 i r2 c t t rr i r =2.5 a i f =5ma i f =10ma i f =100ma i f =150ma v r =70v v r =20v v r =6v , f=1mhz v r =6v , i f =5ma mi n. t yp . 80 0.62 0.72 0.855 1.0 1.25 0.1 25 3.5 4 v v v v v a na pf ns v rm v rrm v rwm v r v r(rms) i fm i o i fsm p d r ja t stg 100 80 57 500 250 4.0 2.0 150 833 -65 to +150 v v v ma ma a mw o c/w o c sot -523
page 2 qw -b0038 rev :a comchip t echnology co., l td. rating and characteristic curves (cdsh3-4448/a/c/s ) -g r , i n s t a n t a n e o u s r e v e r s e c u r r e n t ( n a ) v r , instantaneous reverse v oltage (v) 0 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( m a ) v f , instantaneous forward v oltage (v) 0 0 . 4 0 . 8 1 . 6 0 c t , c a p a c i t a n c e b e t w e e n t e r m i n a l s ( p f ) v r , reverse v oltage (v) 1 . 5 3 0 2 0 0 . 1 1 0 1 0 0 4 0 5 0 1 0 0 1 0 0 0 0 p d , p o w e r d i s s i p a t i o n ( m w ) t a , ambient t emperature (c) 2 0 0 2 5 0 1 5 0 1 . 2 1 8 0 0 2 0 0 1 0 0 0 . 1 1 0 0 1 0 0 0 1 0 0 0 0 1 0 1 2 0 5 0 smd switching diodes o t a =125 c o t a =75 c o t a =25 c o t a =0 c o t a =-40 c 4 0 6 0 o t a =125 c o t a =75 c o t a =25 c o t a =0 c o t a =-40 c 1 0 3 0 0 . 5 1 2 2 . 5 1 0 0 f=1mhz fig.2 reverse characteristics - fig.1 - forward characteristics fig.4 - power derating curve fig.3 capacitance between - t erminals characteristics
|
